3D active edge silicon detector tests with 120 GeV muons

IEEE Transactions on Nuclear Science

Volumn 56, Issue 2, 2009, Pages 505-518

  Da Vià, Cinzia ^a   Deile, Mario ^b   Hasi, Jasmine ^a   Kenney, Christopher ^c   Kok, Angela ^d   Parker, Sherwood ^e   Watts, Stephen ^a   Anelli, Giovanni ^b   Avati, Valentina ^f   Bassetti, Valerio ^g   Boccone, Vittorio ^g   Bozzo, Marco ^g   Eggert, Karsten ^b   Ferro, Fabrizio ^g   Inyakin, Alexandre ^b   Kaplon, Jan ^b   Bahilo, Julio Lozano ^b   Morelli, Aldo ^g   Niewiadomski, Hubert ^b   Noschis, Elias ^b   Oljemark, Fredrik ^f   Oriunno, Marco ^b   Österberg, Kenneth ^f   Ruggiero, Gennaro ^b   Snoeys, Walter ^b   Tapprogge, Stefan ^f   more..

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b CERN   (Switzerland)

^c Stanford University   (United States)

^d SINTEF   (Norway)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^f UNIVERSITY OF HELSINKI   (Finland)

^g UNIVERSITY OF GENOA   (Italy)

Author keywords

3D silicon detectors; Active edges; Forward proton tagging; Large hadron collider; Radiation hardness; Roman pots

Indexed keywords

3D SILICON DETECTORS; ACTIVE EDGES; FORWARD PROTON TAGGING; LARGE HADRON COLLIDER; RADIATION HARDNESS; ROMAN POTS;

COLLIDING BEAM ACCELERATORS; HARDNESS; INVERSE KINEMATICS; METAL DETECTORS; MICROSTRIP DEVICES; NONMETALS; PROTONS; RADIATION DETECTORS; SEMICONDUCTING SILICON COMPOUNDS; SIGNAL TO NOISE RATIO; SILICON WAFERS;

SILICON DETECTORS;

EID: 64749106888     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2013951     Document Type: Article

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