Study of silver diffusion in silicon carbide

Journal of Nuclear Materials

Volumn 389, Issue 2, 2009, Pages 326-331

  Friedland, E ^a   Malherbe, J B ^a   van der Berg, N G ^a   Hlatshwayo, T ^a   Botha, A J ^a   Wendler, E ^b   Wesch, W ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY E; ARRHENIUS TYPE TEMPERATURE DEPENDENCES; ATOMIC DENSITIES; FICK DIFFUSIONS; FLUENCES; FREQUENCY FACTORS; FRONT SURFACES; GRAIN-BOUNDARY DIFFUSIONS; ISOCHRONAL ANNEALING; PARTICLE CHANNELINGS; POLY-CRYSTALLINE; PROJECTED RANGES; ROOM TEMPERATURES; SILVER DIFFUSIONS; SINGLE-CRYSTALLINE; SURFACE REGIONS; UPPER LIMITS; VACUUM-ANNEALING;

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; SILICON CARBIDE;

SILVER;

EID: 64649084180     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2009.02.022     Document Type: Article

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