The effect of annealing at 1500 °C on migration and release of ion implanted silver in CVD silicon carbide

Journal of Nuclear Materials

Volumn 357, Issue 1-3, 2006, Pages 31-47

  MacLean, H J ^a   Ballinger, R G ^b   Kolaya, L E ^c   Simonson, S A ^c   Lewis, N ^c   Hanson, M E ^c  

^a IDAHO NATIONAL LABORATORY   (United States)

^b Massachusetts Institute of Technology   (United States)

^c LOCKHEED MARTIN   (United States)

Author keywords

C0600; F0500; F0700; I0400; S0400

Indexed keywords

ANECHOIC CHAMBERS; CHEMICAL VAPOR DEPOSITION; GRAIN BOUNDARIES; ION IMPLANTATION; PHASE SEPARATION; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAIN BOUNDARY DIFFUSION; OPTICAL METHODS; PEAK CONCENTRATIONS; SILVER IONS;

SILVER;

EID: 33749317215     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2006.05.043     Document Type: Article

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