Effect of annealing on optical constants of Se75S25-xCdx chalcogenide thin films

Physica B: Condensed Matter

Volumn 404, Issue 8-11, 2009, Pages 1354-1358

  Al Hazmi, F S ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

Absorption coefficient; Activation energy; Annealing; Chalcogenide glasses; dc Conductivity; Optical band gap

Indexed keywords

ABSORPTION COEFFICIENT; ANNEALING TEMPERATURES; BAND EDGES; CHALCOGENIDE GLASSES; CHALCOGENIDE THIN FILMS; CRYSTALLIZATION TEMPERATURES; DC CONDUCTIVITY; DC CONDUCTIVITY MEASUREMENTS; EXTINCTION COEFFICIENTS (K); IN-BETWEEN; LOCALIZED STATE; NON-ISOTHERMAL DSC MEASUREMENTS; OPTICAL BAND GAP; PHOTON ENERGIES; TEMPERATURE RANGES; THERMAL EVAPORATION TECHNIQUES; THERMALLY-ASSISTED TUNNELING; WAVELENGTH REGIONS;

ABSORPTION; ANNEALING; CADMIUM; CRYSTALLIZATION; ENERGY GAP; GLASS; GLASS TRANSITION; OPTICAL BAND GAPS; OPTICAL CONDUCTIVITY; OPTICAL CONSTANTS; REFRACTIVE INDEX; SEMICONDUCTING SELENIUM COMPOUNDS; THERMAL EVAPORATION; THIN FILMS;

ACTIVATION ENERGY;

EID: 64549150951     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.12.019     Document Type: Article

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