Relating grain-boundary complexion to grain-boundary kinetics II: Silica-doped alumina

Journal of the American Ceramic Society

Volumn 91, Issue 7, 2008, Pages 2314-2320

  Dillon, Shen J ^a   Harmer, Martin P ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABNORMAL GRAINS; CRYSTALLIZED FILMS; DOPANT CONCENTRATIONS; DOPED ALUMINAS; GRAIN GROWTH BEHAVIORS; GRAIN-BOUNDARY; GRAIN-GROWTH KINETICS; HIGH PURITIES; HIGH TEMPERATURES; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPIES; HIGHER TEMPERATURES; INTER-GRANULAR FILMS; MULTILAYER ADSORPTIONS; TEMPERATURE RANGES;

ACTIVATION ENERGY; ADSORPTION; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; GROWTH KINETICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NORMAL DISTRIBUTION; SILICA;

GRAIN GROWTH;

EID: 64549118687     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02432.x     Document Type: Article

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