Conversion of polycrystalline Al2O3 into single-crystal sapphire by abnormal grain growth

Journal of the American Ceramic Society

Volumn 85, Issue 5, 2002, Pages 1275-1280

  Scott, Curtis ^a,c   Kaliszewski, Mary ^a,c   Greskovich, Charles ^b,c   Levinson, Lionel ^b,c  

^a GENERAL ELECTRIC COMPANY   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); POLYCRYSTALLINE MATERIALS; SAPPHIRE;

ABNORMAL GRAIN GROWTH (AGG);

SINGLE CRYSTALS;

EID: 0036573302     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2002.tb00257.x     Document Type: Conference Paper

References (21)

1. Grain boundary migration in ceramics
2. Theory of grain boundary migration rates
3. The impurity-drag effect in grain boundary motion
4. Pore-grain boundary interactions and grain growth
5. 3 in the presence of a liquid phase
6. Grain growth
7. Effects of additions of MgO, ZnO, and NiO on grain growth in dense alumina
8. 3
9. Measurement of particle sizes in opaque bodies
10. On the theory of normal and abnormal grain growth
11. The impurity-drag effect in grain boundary motion
12. Grain growth kinetics for alumina in the absence of a liquid phase
13. 3 at high temperatures
14. Effective ionic radii in oxides and fluorides
15. 3
16. 3
17. 3
18. Boundary migration of single crystal in polycrystalline alumina