High-quality micromachining of silicon at 1064 nm using a high-brightness MOPA-based 20-W Yb fiber laser

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 2, 2009, Pages 462-470

  O'Neill, William ^a   Li, Kun ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Fiber; Laser; Machining; Si

Indexed keywords

AVERAGE POWER; DELETERIOUS EFFECTS; DIODE-PUMPED; ETCH RATES; FULL WIDTH AT HALF-MAXIMUM; HIGH BRIGHTNESS; HIGH QUALITIES; LASER CONFIGURATIONS; MASTER-OSCILLATOR POWER AMPLIFIERS; MATERIAL RESPONSE; PEAK POWER; PERCUSSION DRILLINGS; PRELIMINARY ANALYSIS; PROCESSING PARAMETERS; PULSE PARAMETERS; PULSE REPETITION RATES; RECAST LAYERS; REPETITION RATES; SI; SOLID-STATE SYSTEMS; SURFACE DAMAGES; THERMALLY INDUCED; YB LASERS; YB-FIBER LASERS;

COMMUNICATION CHANNELS (INFORMATION THEORY); FIBER LASERS; FIBERS; MACHINING; OPTICAL PHASE CONJUGATION; POWER AMPLIFIERS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SILICON; YTTERBIUM;

PUMPING (LASER);

EID: 64549095508     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2012269     Document Type: Article

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