Structural and electrical properties of amorphous GaAs sputtered at high substrate temperature (220 and 400 °c)

Vacuum

Volumn 80, Issue 4, 2005, Pages 272-283

  El Hadadi, Benachir ^a   Carchano, Hervé ^b   Seguin, Jean Luc ^b   Tijani, Hassan ^c  

^a FACULTÉ DES SCIENCES ET TECHNIQUES GUÉLIZ   (Morocco)

^b AIX MARSEILLE UNIVERSITÉ   (France)

^c FACULTÉ DES SCIENCES   (Morocco)

Author keywords

Amorphous gallium arsenide; Conductivity; Sputtering; Structure; Thermalisation

Indexed keywords

AMORPHOUS MATERIALS; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; SPUTTERING; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS GALLIUM ARSENIDE; CONDUCTIVITY; STRUCTURE; THERMALISATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 26444620767     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.05.002     Document Type: Article

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