SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3524-3527

Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N2 as doping gas

(4) Hoshide, Yoshiki a Tabata, Akimori a Kitagawa, Akihiko b Kondo, Akihiro b

a NAGOYA UNIVERSITY (Japan)

b GIFU UNIVERSITY (Japan)

Author keywords

Hot wire chemical vapor deposition; Low temperature deposition; Nanocrystal; SiC; Wide band gap material

Indexed keywords

HOT-WIRE CHEMICAL VAPOR DEPOSITION; LOW-TEMPERATURE DEPOSITION; NANOCRYSTAL; SIC; WIDE BAND GAP MATERIAL;

ACTIVATION ENERGY; AERODYNAMICS; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ENERGY GAP; FLOW OF GASES; FLOW RATE; HALL EFFECT; MAGNETIC FIELD EFFECTS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALS; SILICON CARBIDE; VAPORS; WIRE;

FILM PREPARATION;

EID: 64349116726 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2009.01.045 Document Type: Article

Times cited : (14)

References (13)

1
- 0031206903
- Matsunami H., and Kimoto T. Mater. Sci. Eng., R 20 (1997) 125
- (1997) Mater. Sci. Eng., R , vol.20 , pp. 125
- Matsunami, H.¹ Kimoto, T.²

2
- 33646492531
- Miyajima S., Haga K., Yamada A., and Konagai M. Jpn. J. Appl. Phys. 45 (2006) L432
- (2006) Jpn. J. Appl. Phys. , vol.45
- Miyajima, S.¹ Haga, K.² Yamada, A.³ Konagai, M.⁴

3
- 34547918910
- Ogawa S., Yoshida N., Itoh T., and Nonomura S. Jpn. J. Appl. Phys. 46 (2007) 518
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 518
- Ogawa, S.¹ Yoshida, N.² Itoh, T.³ Nonomura, S.⁴

4
- 34547707540
- Komura Y., Tabata A., Narita T., Kanaya M., Kondo A., and Mizutani T. Jpn. J. Appl. Phys. 46 (2007) 45
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 45
- Komura, Y.¹ Tabata, A.² Narita, T.³ Kanaya, M.⁴ Kondo, A.⁵ Mizutani, T.⁶

5
- 36749012932
- Komura Y., Tabata A., Narita T., and Kondo A. Thin Solid Films 516 (2008) 633
- (2008) Thin Solid Films , vol.516 , pp. 633
- Komura, Y.¹ Tabata, A.² Narita, T.³ Kondo, A.⁴

6
- 34547891754
- Harris G.L. (Ed), Inspec, London
- Nashiyama I. In: Harris G.L. (Ed). Properties of Silicon Carbide (1995), Inspec, London 88
- (1995) Properties of Silicon Carbide , pp. 88
- Nashiyama, I.¹

7
- 0000179049
- Langmuir I. J. Am. Chem. Soc. 34 (1912) 860
- (1912) J. Am. Chem. Soc. , vol.34 , pp. 860
- Langmuir, I.¹

8
- 0003101013
- Langmuir I., and Mackay G.M.J. J. Am. Chem. Soc. 36 (1914) 1708
- (1914) J. Am. Chem. Soc. , vol.36 , pp. 1708
- Langmuir, I.¹ Mackay, G.M.J.²

9
- 0001430857
- Musumeci P., Reitano R., Calcagno L., Roccaforte F., Makhtari A., and Grimaldi M.G. Philos. Mag. B 76 (1997) 323
- (1997) Philos. Mag. B , vol.76 , pp. 323
- Musumeci, P.¹ Reitano, R.² Calcagno, L.³ Roccaforte, F.⁴ Makhtari, A.⁵ Grimaldi, M.G.⁶

10
- 34547841880
- Miyajima S., Yamada A., and Konagai M. Jpn. J. Appl. Phys. 46 (2007) 1415
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 1415
- Miyajima, S.¹ Yamada, A.² Konagai, M.³

11
- 36549090607
- Segall B., Alterovitz S.A., Haugland E.J., and Matus L.G. Appl. Phys. Lett. 49 (1986) 584
- (1986) Appl. Phys. Lett. , vol.49 , pp. 584
- Segall, B.¹ Alterovitz, S.A.² Haugland, E.J.³ Matus, L.G.⁴

12
- 64349114582
- Eickhoff M., Moller H., Stoemenos J., Zappe S., Kroetz G., and Stutzmann M. J. Appl. Phys. 95 (2004) 12
- (2004) J. Appl. Phys. , vol.95 , pp. 12
- Eickhoff, M.¹ Moller, H.² Stoemenos, J.³ Zappe, S.⁴ Kroetz, G.⁵ Stutzmann, M.⁶

13
- 0347110836
- Shimakawa K. J. Non-Cryst. Solids 266-269 (2000) 223
- (2000) J. Non-Cryst. Solids , vol.266-269 , pp. 223
- Shimakawa, K.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.