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Volumn 517, Issue 12, 2009, Pages 3516-3519
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Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2
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Author keywords
CVD; Hot wire; Low temperature deposition; Nanocrystalline; Silicon carbide
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Indexed keywords
C ATOMS;
CVD;
FILAMENT TEMPERATURES;
FOURIER TRANSFORM INFRARED ABSORPTIONS;
HIGH DENSITIES;
HIGH-T;
HOT-WIRE;
HOT-WIRE CHEMICAL VAPOR DEPOSITIONS;
LOW-TEMPERATURE DEPOSITION;
NANOCRYSTALLINE;
PER UNITS;
RAMAN SCATTERING SPECTROSCOPIES;
SI ATOMS;
SILICON CARBIDE THIN FILMS;
X- RAY DIFFRACTIONS;
ABSORPTION SPECTROSCOPY;
AMORPHOUS SILICON;
ATOMS;
CHEMICAL VAPOR DEPOSITION;
CRYSTALLITES;
FOURIER TRANSFORMS;
INFRARED SPECTROSCOPY;
NANOCRYSTALLINE ALLOYS;
NANOCRYSTALLINE SILICON;
SILICON CARBIDE;
THIN FILMS;
VAPORS;
WIRE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 64349111938
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.01.042 Document Type: Article |
Times cited : (18)
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References (10)
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