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Volumn 517, Issue 12, 2009, Pages 3516-3519

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

Author keywords

CVD; Hot wire; Low temperature deposition; Nanocrystalline; Silicon carbide

Indexed keywords

C ATOMS; CVD; FILAMENT TEMPERATURES; FOURIER TRANSFORM INFRARED ABSORPTIONS; HIGH DENSITIES; HIGH-T; HOT-WIRE; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; LOW-TEMPERATURE DEPOSITION; NANOCRYSTALLINE; PER UNITS; RAMAN SCATTERING SPECTROSCOPIES; SI ATOMS; SILICON CARBIDE THIN FILMS; X- RAY DIFFRACTIONS;

EID: 64349111938     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.042     Document Type: Article
Times cited : (18)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.