Synthesis and characterization of single-phase Mn-doped ZnO

Physica B: Condensed Matter

Volumn 404, Issue 8-11, 2009, Pages 1509-1514

  Chattopadhyay, S ^a,b   Dutta, S ^a   Banerjee, A ^a   Jana, D ^a   Bandyopadhyay, S ^a   Sarkar, A ^c  

^a UNIVERSITY OF CALCUTTA   (India)

^b TAKI GOVERNMENT COLLEGE   (India)

^c BANGABASI COLLEGE   (India)

Author keywords

Defects; Semiconductor; X ray diffraction

Indexed keywords

BAND GAPS; DEFECT SITES; DEFECT STATE; DILUTE MAGNETIC SEMICONDUCTORS; IMPURITY PEAKS; LIFETIME PARAMETERS; LOW BAND GAPS; MILLING TIME; MN-DOPED; MN-DOPED ZNO; MN-DOPING; PHYSICAL ASPECTS; POLY-CRYSTALLINE; POSITRON ANNIHILATION LIFETIME SPECTROSCOPIES; ROOM TEMPERATURES; ROOM-TEMPERATURE RESISTIVITIES; SEMICONDUCTOR; SOLID-STATE SINTERING; SYNTHESIS AND CHARACTERIZATIONS; TRAPPING MODELS; WURTZITE-TYPE STRUCTURES; ZNO;

DEFECTS; DIFFRACTION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ENERGY GAP; GRAIN BOUNDARIES; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; MILLING (MACHINING); POSITRONS; SEMICONDUCTING ZINC COMPOUNDS; SINTERING; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE; ZINC SULFIDE;

MANGANESE;

EID: 64149128905     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.01.008     Document Type: Article

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