-
1
-
-
33847702858
-
New developments in gallium nitride and the impact on power electronics
-
Recife, Brazil
-
M. A. Khan, G. Simin, S. G. Pytel, A. Monti, E. Santi, and J. L. Hudgins, "New developments in gallium nitride and the impact on power electronics," in Proc. IEEE Power Electron. Spec. Conf., Recife, Brazil, 2005, pp. 15-26.
-
(2005)
Proc. IEEE Power Electron. Spec. Conf
, pp. 15-26
-
-
Khan, M.A.1
Simin, G.2
Pytel, S.G.3
Monti, A.4
Santi, E.5
Hudgins, J.L.6
-
2
-
-
33748483637
-
The 1.6-kV AlGaN/GaN HFETs
-
Sep
-
N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. A. Khan, "The 1.6-kV AlGaN/GaN HFETs," IEEE Electron Device Lett., vol. 27, no. 9, pp. 716-718, Sep. 2006.
-
(2006)
IEEE Electron Device Lett
, vol.27
, Issue.9
, pp. 716-718
-
-
Tipirneni, N.1
Koudymov, A.2
Adivarahan, V.3
Yang, J.4
Simin, G.5
Khan, M.A.6
-
3
-
-
0001671374
-
High-temperature performance of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect-transistors
-
G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska, "High-temperature performance of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect-transistors," Phys. Stat. Sol. (A), vol. 188, no. 1, pp. 219-222, 2001.
-
(2001)
Phys. Stat. Sol. (A)
, vol.188
, Issue.1
, pp. 219-222
-
-
Simin, G.1
Tarakji, A.2
Hu, X.3
Koudymov, A.4
Yang, J.5
Asif Khan, M.6
Shur, M.S.7
Gaska, R.8
-
4
-
-
0036446473
-
Development of a 1 MHz MOSFET gate-driver for integrated converters
-
M. A. de Rooij, J. T. Strydom, J. D. van Wyk, and P. Beamer, "Development of a 1 MHz MOSFET gate-driver for integrated converters," in Conf. Rec. 37th IEEE IAS Annu. Meeting, 2002, pp. 2622-2629.
-
(2002)
Conf. Rec. 37th IEEE IAS Annu. Meeting
, pp. 2622-2629
-
-
de Rooij, M.A.1
Strydom, J.T.2
van Wyk, J.D.3
Beamer, P.4
-
5
-
-
64049100697
-
2.OA gate drive optocoupler with integrated (VCE) desaturation detection and fault status feedback
-
"2.OA gate drive optocoupler with integrated (VCE) desaturation detection and fault status feedback," Hewlett Packard Technical Datasheet for the HCPL316J Integrated Circuit.
-
Hewlett Packard Technical Datasheet for the HCPL316J Integrated Circuit
-
-
-
9
-
-
64049104108
-
-
Nat. Semicond, Santa Clara, CA, Feb
-
Datasheet of DS0026, Nat. Semicond., Santa Clara, CA, Feb. 2002.
-
(2002)
Datasheet of DS0026
-
-
-
10
-
-
64049091032
-
-
Nat. Semicond, Santa Clara, CA, Oct
-
Datasheet of LM5112, Nat. Semicond., Santa Clara, CA, Oct. 2004.
-
(2004)
Datasheet of LM5112
-
-
-
11
-
-
64049108413
-
-
Texas Instrum, Dallas, TX
-
Datasheet of UCC27323/4/5, Texas Instrum., Dallas, TX, 2007.
-
(2007)
Datasheet of UCC27323/4/5
-
-
-
12
-
-
2342622750
-
A comparison of fundamental gate-driver topologies for high frequency applications
-
J. T. Strydom, M. A. de Rooij, and J. D. van Wyk, "A comparison of fundamental gate-driver topologies for high frequency applications," in Proc. IEEE APEC, 2004, pp. 1045-1052.
-
(2004)
Proc. IEEE APEC
, pp. 1045-1052
-
-
Strydom, J.T.1
de Rooij, M.A.2
van Wyk, J.D.3
-
13
-
-
0003791481
-
Resonant gate drive techniques for power MOSFETs,
-
M.S. thesis, Virginia Polytech. Inst. State Univ, Blacksburg, VA
-
Y. Chen, "Resonant gate drive techniques for power MOSFETs," M.S. thesis, Virginia Polytech. Inst. State Univ., Blacksburg, VA, 2000.
-
(2000)
-
-
Chen, Y.1
-
14
-
-
0036075625
-
A resonant power MOSFET/IGBT gate driver
-
Mar. 10-14
-
I. D. de Vries, "A resonant power MOSFET/IGBT gate driver," in Proc. IEEE APEC, Mar. 10-14, 2002, vol. 1, pp. 179-185.
-
(2002)
Proc. IEEE APEC
, vol.1
, pp. 179-185
-
-
de Vries, I.D.1
-
15
-
-
1842527611
-
A resonant MOSFET gate driver with efficient energy recovery
-
Mar
-
Y. Chen, F. C. Lee, L. Amoroso, and H.-P. Wu, "A resonant MOSFET gate driver with efficient energy recovery," IEEE Trans. Power Electron. vol. 19, no. 2, pp. 470-477, Mar. 2004.
-
(2004)
IEEE Trans. Power Electron
, vol.19
, Issue.2
, pp. 470-477
-
-
Chen, Y.1
Lee, F.C.2
Amoroso, L.3
Wu, H.-P.4
-
16
-
-
19844367800
-
High-voltage devices and circuits in standard CMOS technologies,
-
Ph.D. dissertation, EPFL, Lausanne, Switzerland
-
H. Ballan, "High-voltage devices and circuits in standard CMOS technologies," Ph.D. dissertation, EPFL, Lausanne, Switzerland, 1997.
-
(1997)
-
-
Ballan, H.1
|