An efficient high-frequency drive circuit for GaN power HFETs

IEEE Transactions on Industry Applications

Volumn 45, Issue 2, 2009, Pages 843-853

  Wang, Bo ^a   Tipirneni, Naveen ^b   Riva, Marco ^c   Monti, Antonello ^d   Simin, Grigory ^a   Santi, Enrico ^a  

^a University of South Carolina   (United States)

^b Vishay   (United States)

^c UNIVERSITY OF MILAN   (Italy)

^d RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Gallium nitride (GaN) heterostructure field effect transistors (HFETs); High speed; Resonant drive circuit

Indexed keywords

EXPERIMENTAL MEASUREMENTS; GAN HFET; HIGH FREQUENCIES; HIGH SPEED; HIGH-FREQUENCY DRIVES; HIGH-POWER; HIGH-SPEED DRIVES; III NITRIDES; LEVEL SHIFTERS; LOW-POWER; LOW-POWER APPLICATIONS; NEGATIVE GATES; POWER CONSUMED; POWER LOSS; RESONANT DRIVE CIRCUIT; SIGNAL TIMINGS; SIMULATION RESULTS; SWITCHING SPEED; SWITCHING TRANSITIONS; TELECOM; VOLTAGE SOURCES; WIDE BANDS;

AUTOMOBILE DRIVERS; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SPEED; TIMING CIRCUITS;

FIELD EFFECT TRANSISTORS;

EID: 64049109140     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2009.2013578     Document Type: Article

References (16)

1. M. A. Khan, G. Simin, S. G. Pytel, A. Monti, E. Santi, and J. L. Hudgins, "New developments in gallium nitride and the impact on power electronics," in Proc. IEEE Power Electron. Spec. Conf., Recife, Brazil, 2005, pp. 15-26.
2. N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. A. Khan, "The 1.6-kV AlGaN/GaN HFETs," IEEE Electron Device Lett., vol. 27, no. 9, pp. 716-718, Sep. 2006.
3. G. Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska, "High-temperature performance of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect-transistors," Phys. Stat. Sol. (A), vol. 188, no. 1, pp. 219-222, 2001.
4. M. A. de Rooij, J. T. Strydom, J. D. van Wyk, and P. Beamer, "Development of a 1 MHz MOSFET gate-driver for integrated converters," in Conf. Rec. 37th IEEE IAS Annu. Meeting, 2002, pp. 2622-2629.
5. "2.OA gate drive optocoupler with integrated (VCE) desaturation detection and fault status feedback," Hewlett Packard Technical Datasheet for the HCPL316J Integrated Circuit.
6. "High and low side driver," International Rectifier Technical Datasheet for the IR2113 Integrated Circuit.
7. "IGBT-driving hybrid ICs (EXB8.-series)," Fuji Electric Application Manual.
8. "Hybrid Dual MOSFET-Driver," Semikron Technical Datasheet for the SKHI 21 A Hybrid Gate Driver Circuit.
9. Datasheet of DS0026, Nat. Semicond., Santa Clara, CA, Feb. 2002.
10. Datasheet of LM5112, Nat. Semicond., Santa Clara, CA, Oct. 2004.
11. Datasheet of UCC27323/4/5, Texas Instrum., Dallas, TX, 2007.
12. J. T. Strydom, M. A. de Rooij, and J. D. van Wyk, "A comparison of fundamental gate-driver topologies for high frequency applications," in Proc. IEEE APEC, 2004, pp. 1045-1052.
13. Y. Chen, "Resonant gate drive techniques for power MOSFETs," M.S. thesis, Virginia Polytech. Inst. State Univ., Blacksburg, VA, 2000.
14. I. D. de Vries, "A resonant power MOSFET/IGBT gate driver," in Proc. IEEE APEC, Mar. 10-14, 2002, vol. 1, pp. 179-185.
15. Y. Chen, F. C. Lee, L. Amoroso, and H.-P. Wu, "A resonant MOSFET gate driver with efficient energy recovery," IEEE Trans. Power Electron. vol. 19, no. 2, pp. 470-477, Mar. 2004.
16. H. Ballan, "High-voltage devices and circuits in standard CMOS technologies," Ph.D. dissertation, EPFL, Lausanne, Switzerland, 1997.