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Volumn 45, Issue 2, 2009, Pages 843-853

An efficient high-frequency drive circuit for GaN power HFETs

Author keywords

Gallium nitride (GaN) heterostructure field effect transistors (HFETs); High speed; Resonant drive circuit

Indexed keywords

EXPERIMENTAL MEASUREMENTS; GAN HFET; HIGH FREQUENCIES; HIGH SPEED; HIGH-FREQUENCY DRIVES; HIGH-POWER; HIGH-SPEED DRIVES; III NITRIDES; LEVEL SHIFTERS; LOW-POWER; LOW-POWER APPLICATIONS; NEGATIVE GATES; POWER CONSUMED; POWER LOSS; RESONANT DRIVE CIRCUIT; SIGNAL TIMINGS; SIMULATION RESULTS; SWITCHING SPEED; SWITCHING TRANSITIONS; TELECOM; VOLTAGE SOURCES; WIDE BANDS;

EID: 64049109140     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2009.2013578     Document Type: Article
Times cited : (59)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.