Development of a 1 MHz MOSFET gate-driver for integrated converters

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 4, Issue , 2002, Pages 2622-2629

  De Rooij, M A ^a   Strydom, Johan T ^b   Van Wyk, J Daan ^b   Beamer, P ^b  

^a GENERAL ELECTRIC COMPANY   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

1 MHz; Gate driver; Integrateable; MOSFET; Protection

Indexed keywords

ELECTRIC CURRENTS; MOSFET DEVICES; POWER ELECTRONICS; SOFTWARE PROTOTYPING; SWITCHING;

PULSE WIDTH DISTORTION;

POWER CONVERTERS;

EID: 0036446473     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (33)

1. "2.0A Gate Drive optocoupler with integrated (VCE) Desaturation Detection and Fault Status Feedback", Hewlett Packard technical datasheet for the HCPL316J integrated circuit.
2. "High and Low Side Driver", International Rectifier technical datasheet for the IR2113 integrated circuit.
3. "IGBT-Driving Hybrid ICs (EXB8..-Series)", Fuji Electric application manual.
4. "Hybrid Dual MOSFET-Driver", Semikron technical datasheet for the SKHI 21 A hybrid gate driver circuit.
5. J.T. Strydom, J.D. Van Wyk, M.A. De Rooij, "Integration of a 1-MHz Converter with Active and Passive Stages", Proceedings of the IEEE Applied Power Electronics Conference (APEC), Vol. 2, Anaheim, California, U.S.A., March 2001, pp 1045 - 1050.
6. F. Canales, P. Barbosa, C. Aguilar, F.C. Lee, "A Fixed-Frequency Zero-Voltage-Switching Three-Level DC/DC Resonant Converter", Proceedings CPES Seminar, Virginia Tech, Blacksburg, Virginia U.S.A., April 2001, pp 155 - 160.
7. "12A-Peak Low-Side MOSFET Driver", MICREL technical datasheet for the MIC4451/4452 integrated circuit.
8. S.C. Tang, S.Y.R. Hui, H. Chung, "A Naturally Soft-switched High-Frequency Gate Drive Circuit for Power MOSFETs/IGBTs", Proceedings IEEE Conference on Power Electronics and Drive Systems (PEDS), July 1999, Hong Kong, pp 246-252.
9. P. Wood, "Transformer-Isolated HEXFET™ Driver provides very large duty cycle ratios", International Rectifier, Application note 950A, Chapter 9, pp I-75 - I-77.
10. D. Vasic, F. Costa, E. Sarraute, "A new MOSFET & IGBT gate drive insulated by a piezoelectric transformer", Record of the 32tnd IEEE Annual Power Electronics Specialists Conference (PESC), 2001, Vol 3, pp 1479-1484.
11. S.Y. Hui, S.C. Tang, H.S. Chung, "Optimal Operation of Coreless PCB Transformer-Isolated Gate Drive Circuits with Wide Switching Frequency Range", IEEE Transactions on Power Electronics, Vol 14, No. 3, May 1999, pp 506 - 514.
12. R.L. Lin, F.C. Lee, "Single-power-supply-based transformerless IGBT/MOSFET gate-driver with 100% high-side turn-on duty cycle operation performance using auxiliary bootstrapped charge pumper", Record of the 28th IEEE Annual Power Electronics Specialists Conference (PESC), 1997, Vol 2, pp 1205-1209.
13. H.L. Hess, R.J. Baker, "Transformerless Capacitive Coupling of Gate Signals for Series Operation of Power MOS Devices, IEEE Transactions on Power Electronics, Vol. 15, No. 5, September 2000, pp 923 - 930.
14. "14A, 500V, 0.400 Ohm, N-Channel Power MOSFET", Intersil technical datasheet, July 1999, file # 2331.3.
15. "HEXFET™ Power MOSFET", International Rectifier technical datasheet for the IRC840 Power MOSFET.
16. "Adaptive Power MOSFET Driver", VISHAY technical datasheet for the Si9910 integrated circuit, document # S-60752-Rev. F, 5 April 1999.
17. R. Joshi, H. Granada, C. Tangpuz, "MOSFET BGA package", Proceedings of the 50th IEEE Electronic Components & Technology Conference, 2000, pp 944 - 947.
18. R. Fisher, R. Fillion, J. Burgess, W. Hennessy, "High frequency, low cost, power packaging using thin film power overlay technology", Proceedings of the IEEE Applied Power Electronics Conference (APEC) and Exposition, 1995, 10th Annual Part: 1, Vol. 1, pp 12 - 17.
19. S.S. Wen, D. Huff, G.Q. Lu, "Dimple-array interconnect technique for packaging power semiconductor devices and modules", Proceedings of the 13th IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD), 2001, pp 69 - 74.
20. B. Jacobson, "High Frequency Resonant Gate Drive for a Power MOSFET", U.S. Patent # 5,264,736,23 November 1993.
21. D. Maksimovic, "A MOS gate drive with resonant transitions", Record of the 22nd IEEE Annual Power Electronics Specialists Conference (PESC), 1991, pp 527 - 532.
22. H.L.N. Wiegman, "A resonant pulse gate drive for high frequency applications", Proceedings of the IEEE Applied Power Electronics Conference (APEC) and Exposition, 1992, 7th Annual, pp 738 - 743.
23. C. Yuhui, F.C. Lee, L. Amoroso, W. Ho-Pu, "A resonant MOSFET gate-driver with complete energy recovery", Proceedings of the 3rd IEEE Power Electronics and Motion Control Conference (IPEMC) 2000, Vol. 1, pp 402 -406.
24. S. Ochi, N. Zommer, "Driving and Protecting the Latest High Voltage and Current Power MOS and IGBTs", Conference Record of the 1992 IEEE Industry Applications Society (IAS) Annual Meeting, vol. 1, pp 1196 -1203.
25. Yong-Seok Kim; Seung-Ki Sul, "On-line estimation of IGBT junction temperature using on-state voltage drop", Conference Record of the 33rd IEEE Industry Applications Society (IAS) Annual Meeting Conference, 1998, Vol 2, pp 853 -859.
26. R. Chokhawala, G. Castino, "IGBT fault current limiting", Conference Record of the 1993 IEEE Industry Applications Society (IAS) Annual Meeting, Vol 2, pp 1339 -1345.
27. M.J. Case, J.J. Sehoeman,G. Blajszczak, J.D. van Wyk, "An efficient gate-driver for high-power insulated gate bipolar transistors", Conference Record of the 1994 IEEE Industry Applications Society (IAS) Annual Meeting, Vol. 2, pp 1303-1309.
28. S.K. Biswas, B. Basak, K.S. Rajashekara, "Gate Drive Methods for IGBTs in Bridge Configurations", Conference Record of the 1994 IEEE Industry Applications Society (IAS) Annual Meeting, vol.2, pp 1310-1316.
29. V.J. Spataro, "The Transformer Isolated Gate Drive Analysis and Design", Proceedings, PCI, 1986, pp 316-329.
30. B. Andreycak, "A New Generation of High Performance MOSFET Drivers Features High Current, High Speed Outputs", Unitrode Application note U-126.
31. R.N. Buono,"Power MOSFET Gate Drive Provides Overcurrent Protection", Proceedings of PCIM, September 1989, pp 122-123.
32. K.J. Christoph, D.M. Bernero, D.J. Shortt, B.J. Lamb, "High Frequency Power MOSFET Gate Drive Considerations", Proceedings HFPC, May 1988, pp 173-180.
33. N. Mohan, T.M. Undeland, W.P. Robbins, "Power Electronics", Wiley, New York, 1995, 2nd Edition, Chapter 22.