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Applied Physics A: Materials Science and Processing

Volumn 95, Issue 3, 2009, Pages 721-725

Effects of deposition temperature and post-annealing on structure and electrical properties in (La0.5Sr0.5)CoO3 films grown on silicon substrate

(6) Li, Y W a Hu, Z G a Yue, F Y a Zhou, W Z a Yang, P X a Chu, J H a,b

a EAST CHINA NORMAL UNIVERSITY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GROWTHS; DEPOSITION TEMPERATURES; EFFECT OF OXYGENS; ELECTRICAL PROPERTIES; ELECTRICAL RESISTIVITIES; IN-SITU; MICRO-ELECTRONIC DEVICES; PEROVSKITE STRUCTURES; POST-ANNEALED SAMPLES; POST-ANNEALING; PULSED LASERS; RAPID THERMAL PROCESS; SILICON SUBSTRATES; STRUCTURAL AND ELECTRICAL PROPERTIES; SUBSTRATE TEMPERATURES; TEMPERATURE DEPENDENCES;

ANNEALING; COBALT COMPOUNDS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; FILM GROWTH; LANTHANUM; OXIDE MINERALS; OXYGEN; OXYGEN VACANCIES; PEROVSKITE; PULSED LASER DEPOSITION; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

AMORPHOUS FILMS;

EID: 63949088438 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4989-x Document Type: Article

Times cited : (8)

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