1.2 kV rectifiers thermal behaviour: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes

2007 European Conference on Power Electronics and Applications, EPE

Volumn , Issue , 2007, Pages

  Brosselard, P ^a   Jorda X ^a   Vellvehi M ^a   Perez Tomas A ^a   Godignon, P ^a   Millan J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Discrete power device; JBS diode; PiN diode; Schottky diode; Silicon carbide

Indexed keywords

APPLICATIONS; PHOTOLITHOGRAPHY; POWER ELECTRONICS; SILICON; SILICON CARBIDE;

DISCRETE POWER DEVICE; EUROPEAN; JBS DIODE; PIN DIODE; SCHOTTKY DIODE;

ELECTRIC RECTIFIERS;

EID: 51049090541     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPE.2007.4417474     Document Type: Conference Paper

References (7)

1. J. Millán, "Wide Band-gap Power Semiconductor Devices", Proc. Of International Seminar on Power Semiconductors, August 2006, Prague, pp. 19-26
2. Data sheets available online at: http://www.infineon.com.
3. Data sheets available online at: http://www.cree.com/products/power.asp. I.
4. P. Friedrichs, "SiC Power Devices: Present and Future" European Conference on Silicon Carbide and Related Materials, Newcastle UK, September 2006,.
5. J. Baliga, "Modern Power Devices", Malabar : Krieger, 1992, 476 p., ISBN 0-89464-799-7
6. R. Pérez, D. Tournier, A. Pérez, P. Godignon, N. Mestres and J. Millán, "Novel High Voltage Termination for power 4H-SiC bipolar diodes" IEEE Transaction on Electron Devices vol 52, no10 (2005), pp. 2309-2318
7. th International Seminar On Power Semiconductors ISPS'02, Prague (Czek Republic), September 2002, pp. 199-203.