High temperature behaviour of 3.5 kV 4H-SiC JBS diodes

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 285-288

  Brosselard, P ^a   Jorda X ^a   Vellvehi, M ^a   Godignon, P ^a   Millan J ^a   Bergman, J P ^b   Lambert, B ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b Norstel AB   (Sweden)

^c EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; SUBSTRATES; SWITCHING THEORY; THERMOELECTRICITY; VOLTAGE CONTROL;

DC MODES; SCHOTTKY RATIO; TEMPERATURE RANGE; VOLTAGE DEGRADATION;

SCHOTTKY BARRIER DIODES;

EID: 39749126820     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294988     Document Type: Conference Paper

References (5)

1. th EPE Conf., Graz Austria 2001.
2. P. Friedrichs, "SiC Power Devices: Present and Future" European Conference on Silicon Carbide and Related Materials, Newcastle UK, September 2006,.
3. J. Baliga, "Modern Power Devices", Malabar : Krieger, 1992, 476 p, ISBN 0-89464-799-7
4. M.K. Das, J.J. Sumakeris, B.A. Hull, J. Richmond, S. Krishnaswami and A.R. Powell, "Drift-Free, 50A, 10 kV 4H-SiC PiN Diodes with Improvement Device Yields", Material Science Forum, 2005, Vols. 483-485 pp. 965-968.
5. th International Seminar on Power Semiconductor, August 2006, Prague pp. 93-99.