A case for high temperature, high voltage SiC bipolar devices

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 687-692

  Agarwal, Anant ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

BJT; GTO; High temperature; High voltage; PiN

Indexed keywords

EID: 85085716399     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-442-1.687     Document Type: Conference Paper

References (8)

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2. A. Agarwal et al.: Silicon Carbide, Recent Major Advances, Springer-Verlag Berlin Heidelberg 2004, Germany.
3. A. Agarwal, S. Krishnaswami, J.Richmond, C. Capell, S-H. Ryu, J. Palmour, B. Geil, D.Katsis, C. Scozzie and R. Stahlbush: presented at ICSCRM, Pittsburgh, USA, Sept. 2005.
4. Galeckas, J. Linnros and P. Pirouz: Appl. Phys. Lett. Vol.81 (2002), p. 883
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6. J-M. Lee, B-G. Min, S. Kin, K-H. Lee, S. Park, and I-H. Choi: J. Korean Physical Society Vol.40 (2002), p. 320
7. Anant Agarwal, Sumi Krishnaswami, James Richmond, Craig Capell, Sei-Hyung Ryu, John Palmour, Kenneth Jones and Charles Scozzie: Proceedings of Materials Research Society - Silicon Carbide 2006 - Materials, Processing and Devices, Vol. 911, April 18-20 (2006) San Francisco, Ca, p. 431.
8. Sei-Hyung Ryu, Sumi Krishnaswami, Mrinal Das, Brett Hull, James Richmond, Anant Agarwal, John Palmour, and Allen Hefner: presented at ISPSD June 4-8, 2006, Naples, Italy.