Development of ultra high sensitivity UV silicon carbide detectors

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1461-1464

  Yan, Feng ^a   Xin, Xiaobin ^b   Alexandrov, Petre ^c   Stahle, Carl M ^a   Guan, Bing ^a   Zhao, Jian H ^b  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c UNITED SILICON CARBIDE INC   (United States)

Author keywords

Avalanche photodiode; Detectivity; Detector; Photon counter; Ultraviolet

Indexed keywords

AVALANCHE PHOTODIODES; ENERGY GAP; PHOTOMULTIPLIERS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DETECTIVITY; PHOTOMULTIPLIER TUBES; PHOTON COUNTERS; SINGLE PHOTON-COUNTING AVALANCHE PHOTODIODES (SPAD);

ULTRAVIOLET DETECTORS;

EID: 36048979025     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1461     Document Type: Conference Paper

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