SCOPUS 정보 검색 플랫폼

Volumn 527-529, Issue PART 2, 2006, Pages 1255-1260

SiC power MOSFETs - Status, trends and challenges

(4) Peters, Dethard a Schoerner, Reinhold a Friedrichs, Peter a Stephani, Dietrich a

a SiCED Electronics Development GmbH and Co KG (Germany)

Author keywords

Fast recovery; High switching frequency; High voltage; Nitrous oxide; Oxide reliability; Polycrystalline silicon gate; Power converters; Power MOSFET; Switching behavior

Indexed keywords

BLOCKING PROBABILITY; CHANNEL ESTIMATION; POLYSILICON; POWER CONVERTERS; SILICON CARBIDE; SWITCHING FREQUENCY;

FAST RECOVERY; HIGH SWITCHING FREQUENCY; NITROUS OXIDE; OXIDE RELIABILITY; POLYCRYSTALLINE SILICON GATES; SWITCHING BEHAVIOR;

MOSFET DEVICES;

EID: 37249001332 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.1255 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.