Formation mechanism of porous silicon with medium pores: The role of KMnO4

ECS Transactions

Volumn 16, Issue 3, 2009, Pages 125-132

  Fukami, K ^a   Kamakura, H ^a   Sakka, T ^a   Ogata, Y H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTIC POLISHING; ETCHING; HYDROFLUORIC ACID; PORE SIZE; POROUS SILICON; POTASH;

FORMATION MECHANISM; HF SOLUTIONS; PORE FORMATION; POSITIVE SHIFT; POTENTIAL CURVES; TIME DEVELOPMENT;

MANGANESE COMPOUNDS;

EID: 63849112615     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982549     Document Type: Conference Paper

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