Ferroelectric and structural properties of stress-constrained and stress-relaxed polycrystalline BiFeO3 thin films

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Nakashima, Seiji ^a   Ricinschi, Dan ^a   Park, Jung Min ^a   Kanashima, Takeshi ^a   Fujisawa, Hironori ^b   Shimizu, Masaru ^b   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BFO FILMS; COERCIVE FIELDS; CRYSTAL STRUCTURAL; FERROELECTRIC PROPERTIES; FILM PLANES; PLANE ORIENTATIONS; POLARIZATION DIRECTIONS; POLY-CRYSTALLINE; POLYCRYSTALLINE BIFEO; PULSED LASERS; RECIPROCAL SPACE MAPPINGS; REMANENT POLARIZATIONS; ROOM TEMPERATURES; STRESS DEPENDENCES;

FERROELECTRICITY; PLATINUM; POLARIZATION; PULSED LASER DEPOSITION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SUBSTRATES; THIN FILMS;

CRYSTAL STRUCTURE;

EID: 63749129727     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072375     Document Type: Article

References (20)

1. J. G. Ismailzade, Phys. Status Solidi B 0370-1972 10.1002/pssb.2220460156 46, K39 (1971).
2. F. Kubel and H. Schmid, Acta Crystallogr., Sect. A: Found. Crystallogr. 46, 698 (1990). 0365-110X
3. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 0036-8075 10.1126/science.1080615 299, 1719 (2003).
4. J. F. Li, J. Wang, M. Wuttig, R. Ramesh, N. Wang, B. Ruette, A. P. Pyatakov, A. K. Zvezdin, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.1764944 84, 5261 (2004).
5. S. K. Singh, R. Ueno, H. Funakubo, H. Uchida, S. Koda, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.44.8525 44, 8525 (2005).
6. K. Y. Yun, D. Ricinschi, T. Kanashima, M. Noda, and M. Okuyama, Appl. Phys. Lett. 0003-6951 10.1063/1.2385859 89, 192902 (2006).
7. D. Lebeugle, D. Colson, A. Forget, M. Viret, P. Bonville, J. F. Marucco, and S. Fusil, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.024116 76, 024116 (2007).
8. D. Lebeugle, D. Colson, A. Forget, and M. Viret, Appl. Phys. Lett. 0003-6951 10.1063/1.2753390 91, 022907 (2007).
9. D. H. Kim, H. N. Lee, M. D. Biegalski, and H. M. Christen, Appl. Phys. Lett. 0003-6951 10.1063/1.2830799 92, 012911 (2008).
10. H. W. Jang, S. H. Baek, D. Ortiz, C. M. Folkman, C. B. Eom, Y. H. Chu, P. Shafer, R. Ramesh, V. Vaithyanathan, and D. G. Schlom, Appl. Phys. Lett. 0003-6951 10.1063/1.2842418 92, 062910 (2008).
11. S. Nakashima, K. Y. Yun, Y. Nakamura, and M. Okuyama, J. Korean Phys. Soc. 51, 882 (2007).
12. S. Nakashima, K. Y. Yun, Y. Nakamura, and M. Okuyama, Mater. Res. Soc. Symp. Proc. 966 (2007). 1058-4587
13. S. Nakashima, K. Y. Yun, Y. Nakamura, and M. Okuyama, Integr. Ferroelectr. 95, 217 (2007). 1058-4587
14. G. Xu, J. Li, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.2392818 89, 222901 (2006).
15. K. Saito, A. Ulyanencov, V. Grossmann, H. Ress, L. Bruegemann, H. Ohta, T. Kurosawa, S. Ueki, and H. Funakubo, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.45.7311 45, 7311 (2006).
16. G. Xu, H. Hirata, G. Shirane, J. Li, J. Wang, and D. Viehland, Appl. Phys. Lett. 0003-6951 10.1063/1.1924891 86, 182905 (2005).
17. R. R. Das, D. M. Kim, S. H. Baek, C. B. Eom, F. Zavaliche, S. Y. Yang, R. Ramesh, Y. B. Chen, X. Q. Pan, X. Ke, M. S. Rzchowski, and S. K. Streiffer, Appl. Phys. Lett. 0003-6951 10.1063/1.2213347 88, 242904 (2006).
18. T. Kawae, H. Tsuda, H. Naganuma, S. Yamada, M. Kumeda, S. Okamura, and A. Morimoto, Jpn. J. Appl. Phys. 47, 7586 (2008).
19. C. Ederer and N. A. Spaldin, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.95.257601 95, 257601 (2005).
20. X. Gonze, J. -M. Beuken, R. Caracas, F. Detraux, M. Fuchs, G. -M. Rignanese, L. Sindic, M. Verstraete, G. Zerah, F. Jollet, M. Torrent, A. Roy, M. Mikami, P. Ghosez, J. -Y. Raty, and D. C. Allan, Comput. Mater. Sci. 0927-0256 10.1016/S0927-0256(02)00325-7 25, 478 (2002).