Bandgap reduction and photoelectrochemical properties of ZnO:N films deposited by reactive RF magnetron sputtering

Materials Science and Technology Conference and Exhibition, MS and T'08

Volumn 2, Issue , 2008, Pages 952-961

  Ahn, Kwang Soon ^a   Shet, Sudhakar ^a,b   Deutsch, Todd ^a   Yan, Yanfa ^a   Turner, John ^a   Ravindra, N M ^b   Al Jassim, M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Bandgap; Crystallinity; Gas ambient; Photoelectrochemical; RF power; Sputter; Visible light; ZnO

Indexed keywords

BANDGAP; CRYSTALLINITY; GAS AMBIENT; PHOTOELECTROCHEMICAL; RF POWER; SPUTTER; VISIBLE LIGHT; ZNO;

ELECTRODEPOSITION; ENERGY GAP; GAS ABSORPTION; LIGHT; MAGNETRON SPUTTERING; MAGNETRONS; MATERIALS SCIENCE; METALLIC FILMS; WATER ABSORPTION; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 63749119830     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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