Ion beam synthesis of Mn/Sb clusters in silicon

Journal of Physics D: Applied Physics

Volumn 42, Issue 3, 2009, Pages

  Steinert, M ^a   Wesch, W ^a   Undisz, A ^a   Rettenmayr, M ^a   Nunes, W C ^b   Borges, R P ^b   Godinho, M ^b   Rubinger, R M ^c   Carmo, M C ^c   Sobolev, N A ^c  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b Centro de Fisica da Materia Condensada   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR DEPENDENCES; APPLIED FIELDS; CROSS-SECTIONAL TEM; CRYSTALLINE SILICONS; ELECTRON MAGNETIC RESONANCE MEASUREMENTS; FIELD-COOLED MAGNETIZATION CURVES; FLUENCES; HIGH CONCENTRATIONS; IMPLANTED SPECIES; ION BEAM SYNTHESIS; MAGNETIC PHASIS; MAGNETIC SIGNALS; OUT-OF-PLANE ROTATIONS; RADIATION-INDUCED DEFECTS; RAPID THERMAL ANNEALING PROCESS; RESONANCE BANDS; RESONANCE FIELDS; RUTHERFORD BACKSCATTERINGS; SEQUENTIAL ION IMPLANTATIONS; SI(0 0 1); SQUID MAGNETOMETERS; SUPERPARAMAGNETIC NANOPARTICLES; TEMPERATURE DEPENDENTS; ZERO-FIELD-COOLED;

ANTIMONY COMPOUNDS; CRYSTAL STRUCTURE; ION BOMBARDMENT; ION IMPLANTATION; IONS; MAGNETOMETERS; MANGANESE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RESONANCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON COMPOUNDS; SUPERPARAMAGNETISM;

MANGANESE COMPOUNDS;

EID: 63749097615     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/3/035406     Document Type: Article

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