Effect of the cooling rate on the thermoelectric properties of p-type (Bi0.25Sb0.75)2Te3 and n-type Bi2(Te0.94Se0.06)3 after melting in the bismuth-telluride system

Materials Research Bulletin

Volumn 44, Issue 6, 2009, Pages 1352-1359

  Yamashita, Osamu ^a   Ochi, Takahiro ^b   Odahara, Hirotaka ^c  

^a Materials Science Co Ltd   (Japan)

^b EHIME UNIVERSITY   (Japan)

^c Advanced Materials Co Ltd   (Japan)

Author keywords

A. Electronic materials; B. Crystal growth; C. X ray diffraction; D. Antisite defect; D. Thermal conductivity

Indexed keywords

BISMUTH; COOLING; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTION; ELECTRIC RESISTANCE; FREEZING; GRAIN BOUNDARIES; TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY; THERMAL INSULATING MATERIALS; THERMOANALYSIS; THERMOELECTRIC EQUIPMENT; X RAY DIFFRACTION;

A. ELECTRONIC MATERIALS; B. CRYSTAL GROWTH; C. X-RAY DIFFRACTION; D. ANTISITE DEFECT; D. THERMAL CONDUCTIVITY;

INGOTS;

EID: 63749096011     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2008.12.004     Document Type: Article

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