Room-temperature anisotropic, thermoelectric, and electrical properties of n-type (Bi2Te3)90 (Sb2Te3)5 (Sb2Se3)5 and compensated p-type (Sb2Te3)72 (Bi2Te3)25 (Sb2Se3)3 semiconductor alloys

Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7807-7813

  Taylor, P J ^a,b   Maddux, J R ^a   Jesser, W A ^a   Rosi, F D ^a  

^a University of Virginia   (United States)

^b MIT LINCOLN LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002354928     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370589     Document Type: Article

References (18)

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