Capacitance modulation from submicron domain on ferroelectric-semiconductor media

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 10, 1996, Pages 5284-5287

  Yamamoto, Ryoichi ^a   Sanada, Kazuo ^a   Umemura, Shizuo ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

Capacitance modulation signal; Disk memory; Ferroelectrics; Numerical simulation; Rewritable; Semiconductor

Indexed keywords

CAPACITANCE MODULATION; CHARGE DENSITY; CONTINUITY EQUATIONS; ELECTROSTATIC CAPACITANCE; POISSON EQUATIONS;

CALCULATIONS; CAPACITANCE; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT DENSITY; FERROELECTRIC MATERIALS; PERMITTIVITY;

SEMICONDUCTOR STORAGE;

EID: 0030259897     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5284     Document Type: Article

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