Control of thick single crystal erbium oxide growth on (1 1 1) silicon

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2199-2204

  Smith, R S ^a   Sewell, R H ^a   Clark, A ^a   Atanackovic, P ^a  

^a Translucent Inc   (United States)

Author keywords

A1. Crystal structures; A3. Molecular beam epitaxy; B1. Oxides

Indexed keywords

CRYSTAL GROWTH; ERBIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICIDES; SILICON WAFERS; SINGLE CRYSTALS; SUGAR (SUCROSE);

A1. CRYSTAL STRUCTURES; A3. MOLECULAR BEAM EPITAXY; B1. OXIDES; CRITICAL GROWTHS; ERBIUM OXIDES; ERBIUM SILICIDES; IN-SITU; MBE GROWTHS; MOLECULAR-BEAM EPITAXIES; OPTICAL REFLECTOMETRY; PHOTOLUMINESCENCE MAPPINGS; SI (1 1 1); SILICIDE FORMATIONS; X- RAY DIFFRACTIONS;

OXIDE FILMS;

EID: 63649142155     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.10.104     Document Type: Article

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