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Volumn 5, Issue 6, 2008, Pages 1910-1913
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Piezoelectric actuation of all-nitride MEMS
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Author keywords
[No Author keywords available]
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Indexed keywords
2D ELECTRON GAS;
ACTIVE LAYER;
ALGAN;
ALGAN LAYERS;
ALGAN/GAN;
BACK ELECTRODE;
ELECTRICAL FIELD DISTRIBUTIONS;
ELECTROREFLECTANCE;
GAN LAYERS;
HETEROSTRUCTURES;
MECHANICAL OSCILLATIONS;
MEMS TECHNOLOGY;
PIEZOELECTRIC ACTUATION;
PIEZOELECTRIC FORCE MICROSCOPY;
PIEZOELECTRIC RESPONSE;
ELECTRON GAS;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
PHASE INTERFACES;
PIEZOELECTRICITY;
HETEROJUNCTIONS;
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EID: 63649094416
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200778423 Document Type: Conference Paper |
Times cited : (4)
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References (8)
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