Progress in high-power high-efficiency VCSEL arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7229, Issue , 2009, Pages

  Seurin, Jean Francois ^a   Xu, Guoyang ^a   Khalfin, Viktor ^a   Miglo, Aleksandr ^a   Wynn, James D ^a   Pradhan, Prachi ^a   Ghosh, Chuni L ^a   D'Asaro, L Arthur ^a  

^a Princeton Optronics   (United States)

Author keywords

2D array; 808nm; Frequency doubling; High efficiency; High power; Pumping; Reliability; Semiconductor lasers; Solid state laser; Vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

2D ARRAY; 808NM; FREQUENCY DOUBLING; HIGH EFFICIENCY; HIGH-POWER; PUMPING; SOLID-STATE LASER; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSELS);

CHIP SCALE PACKAGES; CONVERSION EFFICIENCY; ELECTRIC CONDUCTIVITY; FREQUENCY DOUBLERS; GALLIUM ALLOYS; HETEROJUNCTIONS; LASERS; MICROOPTICS; OPTICAL WAVEGUIDES; PUMPING (LASER); PUMPS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; SOLID STATE LASERS; SUBSTRATES; TWO DIMENSIONAL;

SURFACE EMITTING LASERS;

EID: 63449141642     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808294     Document Type: Conference Paper

References (21)

1. Seurin, J. F., Ghosh, C. L., Khalfin, V., Miglo, A., Xu, G., Wynn, J. D., Pradhan, P. and D'Asaro, L. A., "High-power high-efficiency 2D VCSEL arrays," Proc. SPIE, 6908, 690808 (2008).
2. Choquette, K. D. and Hou, H. Q., "Vertical-cavity surface-emitting lasers: moving from research to manufacturing," Proc. IEEE, 85(11), 1730-1739 (1997).
3. Tatum, J. A., Clark, A., Guenter, J. K., Hawthorne III, R. A. and Johnson, R. H., "Commercialization of Honeywell's VCSEL technology," Proc. SPIE, 3946, 2-13 (2000).
4. Moser, A. and Latta, E. E., "Arrhenius parameters for the rate process leading to catastrophic optical damage of AlGaAs-GaAs laser facets," J. Appl. Phys., 71(10), 4848-4853 (1992).
5. Morgan, R. A., Hibbs-Brenner, M. K., Marta, T. M., Walterson, R. A., Bounnak, S., Kalweit, E. L. and Lehman, J. A., "200°C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers," IEEE Photon. Technol. Lett., 7(5), 441-443 (1995).
6. Timmermann, A., Meinschien, J., Bruns, P., Burke, C. and Bartoschewski, D., "Next generation high-brightness diode lasers offer new industrial applications," Proc. SPIE, 6876, 68760U (2008).
7. Steegmüller, U., Kühnelt, M., Unold, H., Schwarz, T., Schulz, R., Illek, S., Pietzonka, I., Lindberg, H., Schmitt, M. and Strauss, U., "Green laser modules to fit laser projection out of your pocket," Proc. SPIE, 6871, 687117 (2008).
8. The authors did an extensive literature search but could not find any publications on 808nm VCSELs, except for the following product announcement: http://www.ulm-photonics.com/docs/pr/lW cw from VCSEL.pdf
9. Margalit, N. M., Zhang, S. Z. and Bowers, J. E., "Vertical cavity lasers for telecom applications," IEEE Communications Magazine, 5, 164-170 (1997).
10. Giboney, K. S., Aronson, L. B. and Lemoff, B. E., "The ideal light source for datanets," IEEE Spectrum, 35(2), 43-53 (1998).
11. 1-xAs-AlAs-GaAs quantum well heterostructures and superlattices," Appl. Phys. Lett., 57(26), 2844-2846 (1990).
12. Huffaker, D. L., Deppe, D. G., Kumar, K. and Rogers, T. J., "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., 65(1), 97-99 (1994).
13. Yang, G. M., MacDougal, M. H., Pudikov, V. and Dapkus, P. D., "Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., 7(11), 1228-1230 (1995).
14. Bond, A. E., Dapkus, P. D. and O'Brien, J. D., "Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., 10(10), 1362-1364 (1998).
15. Hegblom, E. R., Margalit, N. M., Fiore, A. and Coldren, L. A., "High-performance small vertical-cavity lasers: a comparison of measured improvements in optical and current confinement in devices using tapered apertures," IEEE J. Select. Topics Quantum Electron., 5(3), 553-560 (1999).
16. Hegblom, E. R., Margalit, N. M., Thibeault, B. J., Coldren, L. A. and Bowers, J. E., "Current spreading in apertured vertical cavity lasers," Proc. SPIE, 3003, 176-180 (1997).
17. 1-xAs/GaAs mirrors for vertical-cavity surface-emitting lasers," J. Vac. Sci. Technol. B, 12(6), 3075-3083 (1994).
18. Babic, D. I. and Corzine, S. W., "Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors," IEEE J. Quantum Electron., 28(2), 514-524 (1992).
19. Bour, D. P. and Rosen, A., "Optimum cavity length for high conversion efficiency quantum well diode lasers," J. Appl. Phys., 66(7), 2813-2818 (1989).
20. Coldren, L. A. and Corzine, S. W., [Diode Lasers and Photonic Integrated Circuits], Wiley-Interscience, New York, (1995).
21. Lear, K. L., Kilcoyne, S. P. and Chalmers, S. A., "High power conversion efficiencies and scaling issues for multimode vertical-cavity top-surface-emitting lasers," IEEE Photon. Technol. Lett., 6(7), 778-781 (1994).