Development of new substrate technologies for GaN LEDs: Atomic layer deposition transition layers on silicon and ZnO

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7231, Issue , 2009, Pages

  Fenwick, W E ^a   Li, N ^a   Jamil, M ^a   Xu, T ^a   Melton, A ^a   Wang, S ^a   Yu, H ^a   Valencia, A ^b   Nause, J ^b   Summers, C ^c   Ferguson, I T ^a,c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Cermet Inc   (United States)

^c Georgia Institute of Technology   (United States)

Author keywords

Atomic layer deposition; GaN; MOCVD; Si; Wide bandgap; ZnO

Indexed keywords

GAN; MOCVD; SI; WIDE BANDGAP; ZNO;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; CHEMICAL VAPOR DEPOSITION; CORUNDUM; CURRENT DENSITY; ENERGY GAP; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHTING; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SOLID STATE DEVICES; SUBSTRATES; SURFACE MORPHOLOGY; TENSILE STRAIN; THIN FILMS; ZINC; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 63449115185     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.815324     Document Type: Conference Paper

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