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Volumn C, Issue , 2003, Pages 2905-2910

Metastability in boron-doped multicrystalline silicon wafers and solar cells

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT REACTION MODELS; ELECTROMAGNETIC CAST (EMC); LIGHT DEGRADATION; METASTABILITY;

EID: 6344292567     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (2)

References (17)
  • 6
    • 0001612762 scopus 로고    scopus 로고
    • Electronic properties of light-induced recombination centers in boron-doped czochralski silicon
    • J. Schmidt and A. Cuevas, "Electronic Properties of Light-induced Recombination Centers in Boron-doped Czochralski Silicon", J. App. Phys. 1999; 86(6): 3 175-3180.
    • (1999) J. App. Phys. , vol.86 , Issue.6 , pp. 3175-3180
    • Schmidt, J.1    Cuevas, A.2
  • 17
    • 0033365078 scopus 로고    scopus 로고
    • Comparison of boron- And gallium-doped p-type Czochralski silicon for photovoltaic application
    • S. Glunz, S. Rein, H. Knobloch, W. Wettling and T. Abe, "Comparison of Boron- and Gallium-doped p-type Czochralski Silicon for Photovoltaic Application", Progress in Photovoltaics 7 (6) 463-469(1999).
    • (1999) Progress in Photovoltaics , vol.7 , Issue.6 , pp. 463-469
    • Glunz, S.1    Rein, S.2    Knobloch, H.3    Wettling, W.4    Abe, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.