Effect of thermal annealing on minority-carrier lifetimes in multicrystalline Si wafers

Solar Energy Materials and Solar Cells

Volumn 65, Issue 1, 2001, Pages 459-463

  Mimura, M ^a   Ishikawa, S ^a   Saitoh, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; HIGH TEMPERATURE EFFECTS; OXYGEN; PASSIVATION; POLYCRYSTALLINE MATERIALS; SILICON; SURFACES;

BULK LIFETIME; CHEMICAL PASSIVATION TECHNIQUE; MINORITY CARRIER LIFETIMES; MULTICRYSTALLINE SILICON WAFERS; THERMAL ANNEALING;

SILICON WAFERS;

EID: 0035203452     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00127-6     Document Type: Article

References (5)

1. S. Ishikawa, S. Inoue, T. Saitoh, Proceedings of the 15th European Photovoltaic Solar Energy Conference, Vienna, 1998, p. 1314.
2. Fuma N., Tashiro K., Kakumoto K., Takano Y. Jpn. J. Appl. Phys. 35:1996;1993.
3. K. Yoshioka, S. Ishikawa, M. Mimira, T. Saitoh, Technical digest of 11th International Photovoltaic Science and Engineering Conference, Hokkaido, 1999, p. 559.
4. Horányi T.S., Pavelka T., Tüttö P. Appl. Surface Sci. 63:1993;306.
5. S. Ishikawa, private communications.