In-situ analysis of perfluoro compounds in semiconductor process exhaust by ion attachment mass spectrometry (IAMS)

Shinku/Journal of the Vacuum Society of Japan

Volumn 45, Issue 12, 2002, Pages 846-853

  Nakamura, Megumi ^a,b   Hino, Kenji ^a   Shiokawa, Yoshiro ^a   Fujii, Toshihiro ^a   Takayanagi, Masao ^b   Nakata, Munetaka ^b  

^a Canon ANELVA Technix Corporation   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DRY ETCHING; EXHAUST GASES; FLUORINE COMPOUNDS; ION BOMBARDMENT; MASS SPECTROMETRY;

MOLECULAR IONS; MULTI-COMPONENT GASES; PERFLUORO COMPOUNDS (PFC);

SEMICONDUCTOR MATERIALS;

EID: 6344283899     PISSN: 05598516     EISSN: None     Source Type: Journal    
DOI: 10.3131/jvsj.45.846     Document Type: Article

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