Structure and electrical properties of La and Nb co-modified Sr 0.8Bi2.2Ta2O9 thin films

Solid State Communications

Volumn 132, Issue 7, 2004, Pages 425-429

  Shi, Haifeng ^a   Tang, Ting Ao ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

A. SLBTN thin film; B. Metalorganic decomposition; C. Scanning electron microscopy; D. Ferroelectric properties; D. Imprint

Indexed keywords

CAPACITORS; COERCIVE FORCE; DECOMPOSITION; FATIGUE OF MATERIALS; FERROELECTRIC MATERIALS; HYSTERESIS; LANTHANUM; LEAKAGE CURRENTS; POLARIZATION; POLYCRYSTALLINE MATERIALS; REDUCTION; SCANNING ELECTRON MICROSCOPY; STRONTIUM COMPOUNDS; STRUCTURE (COMPOSITION);

FEROELECTRIC PROPERTIES; IMPRINT; METALORGANIC DECOMPOSITION; SLBTN THIN FILMS;

THIN FILMS;

EID: 6344282844     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.08.029     Document Type: Article

References (17)

1. J.F. Scott, Ferroelectr. Rev. 1 (1998) 1.
2. C. A-Paz de Araujo, J.D. Cuchiaro, L.D. McMillan, M.C. Scott, J.F. Scott, Nature (London) 374 (1995) 627.
3. S.B. Desu, P.C. Joshi, X. Zhang, S.O. Ryu, Appl. Phys. Lett. 71 (1997) 1041.
4. R.R. Das, P. Bhattacharya, W. Perez, R.S. Katiyar, S.B. Desu, Appl. Phys. Lett. 80 (2002) 637.
5. Y. Noguchi, A. Kitamura, L.-C. Woo, M. Miyayama, K. Oikawa, T. Kamiyayama, Appl. Phys. Lett. 94 (2003) 6749.
6. H. Watanabe, T. Mihara, H. Yoshinori, C.A. Paz de Araujo, Jpn. J. Appl. Phys. 34 (1995) 5240.
7. A. Furuya, J.D. Cuchiaro, J. Appl. Phys. 84 (1998) 6788.
8. Y. Noguchi, M. Miyayama, K. Oikawa, T. Kamiyama, J. Appl. Phys. 95 (2004) 4261.
9. Y. Zhong, G.D. Hu, T.A. Tang, Jpn. J. Appl. Phys. 42 (2003) 12.
10. S. Kojima, I. Saitoh, Physica B 1999; 363-364 see also 653-656.
11. K. Miura, Appl. Phys. Lett. 80 (2002) 2967.
12. Y. Noguchi, M. Miyayama, K. Oikawa, T. Kudo, J. Appl. Phys. 95 (2004) 4261.
13. D. Wu, A.D. Li, L.H. Qing, T. Yu, Z.G. Liu, N.B. Ming, J. Appl. Phys. 90 (2001) 4130.
14. R.S. Muller, T.I. Kamins, Device Electronics for Integrated Circuits, Wiley, New York, p. 401.
15. G.E. Pike, W.L. Warren, D. Dimos, B.A. Tuttle, R. Ramesh, J. Lee, V.G. Keramidas, J.T. Evans Jr., Appl. Phys. Lett. 66 (1995) 484.
16. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, J. Appl. Phys. 92 (2002) 2680.
17. J. Shi-Zhao, J.E. Lim, M.J. Cho, C.S. Hwang, S.-H. Kim, Appl. Phys. Lett. 81 (2002) 1477.