Characteristics of 1T2C-type ferroelectric memory with paired Bi(4-x)LaxTi3O12 (BLT) capacitors

Journal of the Korean Physical Society

Volumn 42, Issue SUPPL., 2003, Pages

  Koo, B J ^a   Ishiwara, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

1T2C type ferroelectric memory; BLT; Data retention; Depolarized field; Ferroelectric gate field effect transistor; Imprint

Indexed keywords

EID: 6344272310     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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