-
1
-
-
6344263363
-
Development of RF equivalent circuit models from physics-based device models
-
S. Luryi, J. Xu, and A. Zaslavsky, Eds., John Wiley and Sons
-
S. Luryi, "Development of RF equivalent circuit models from physics-based device models", in Future Trends in Microelectronics, S. Luryi, J. Xu, and A. Zaslavsky, Eds., pp. 463-466. John Wiley and Sons, 1999.
-
(1999)
Future Trends in Microelectronics
, pp. 463-466
-
-
Luryi, S.1
-
2
-
-
33645482889
-
The equivalent circuit model in solid-state electronics - III. conduction and displacement currents
-
C. T. Sah, 'The equivalent circuit model in solid-state electronics - III. Conduction and displacement currents", Solid State Electron., vol. 13, pp. 1547-1575, 1970.
-
(1970)
Solid State Electron.
, vol.13
, pp. 1547-1575
-
-
Sah, C.T.1
-
3
-
-
84918178669
-
Lumped models of transistors and diodes
-
June
-
J. G. Linvill, "Lumped models of transistors and diodes", Proc. IRE, vol. 46, pp. 1141-1152, June 1958.
-
(1958)
Proc. IRE
, vol.46
, pp. 1141-1152
-
-
Linvill, J.G.1
-
4
-
-
0034313533
-
Generation of equivalent circuits from physics-based device simulation
-
Nov.
-
A. Pacelli, M. Mastrapasqua, and S. Luryi, "Generation of equivalent circuits from physics-based device simulation", IEEE Trans. Computer Aided Design of Integrated Circuits, vol. 19, pp. 1241-1250, Nov. 2000.
-
(2000)
IEEE Trans. Computer Aided Design of Integrated Circuits
, vol.19
, pp. 1241-1250
-
-
Pacelli, A.1
Mastrapasqua, M.2
Luryi, S.3
-
5
-
-
0002371631
-
Simulation of ULSI device effects
-
M. R. Pinto, "Simulation of ULSI device effects", in VLSI Science Technology, 1991, vol. 91-11, pp. 43-51.
-
(1991)
VLSI Science Technology
, vol.91
, Issue.11
, pp. 43-51
-
-
Pinto, M.R.1
-
6
-
-
0025522242
-
Modelling the inductive behavior of short-base p - N junction diodes at high forward bias
-
J. J. H. van den Biesen, "Modelling the inductive behavior of short-base p - n junction diodes at high forward bias", Solid State Electron., vol. 33, pp. 1471-1476, 1990.
-
(1990)
Solid State Electron
, vol.33
, pp. 1471-1476
-
-
Van Den Biesen, J.J.H.1
-
7
-
-
0033079594
-
Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
-
Feb.
-
S. E. Laux and K. Hess, "Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit", IEEE Trans. Electron Devices, vol. 46, pp. 396-412, Feb. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 396-412
-
-
Laux, S.E.1
Hess, K.2
-
8
-
-
0022723607
-
A simple regional analysis of transit times in bipolar transistors
-
J. J. H. van den Biesen, "A simple regional analysis of transit times in bipolar transistors", Solid State Electron., vol. 29, pp. 529-534, 1986.
-
(1986)
Solid State Electron
, vol.29
, pp. 529-534
-
-
Van Den Biesen, J.J.H.1
-
9
-
-
0011803699
-
Parasitic extraction: Current state of the art and future trends
-
W. H. Kao, C.-Y. Lo, M. Basel, and R. Singh, "Parasitic extraction: Current state of the art and future trends", Proc. IEEE, vol. 89, pp. 729-739, 2001.
-
(2001)
Proc. IEEE
, vol.89
, pp. 729-739
-
-
Kao, W.H.1
Lo, C.-Y.2
Basel, M.3
Singh, R.4
-
10
-
-
0016035432
-
Equivalent circuit models for three-dimensional multiconductor systems
-
Mar.
-
A. E. Ruehli, "Equivalent circuit models for three-dimensional multiconductor systems", IEEE Trans. Microwave Theory and Techniques, vol. 22, pp. 216-221, Mar. 1974.
-
(1974)
IEEE Trans. Microwave Theory and Techniques
, vol.22
, pp. 216-221
-
-
Ruehli, A.E.1
-
11
-
-
0027609967
-
The effects of BJT self-heating on circuit behavior
-
June
-
R. M. Fox, S.-G. Lee, and D. T. Zweidinger, "The effects of BJT self-heating on circuit behavior", IEEE J. Solid-State Circuits, vol. 28, pp. 678-685, June 1993.
-
(1993)
IEEE J. Solid-state Circuits
, vol.28
, pp. 678-685
-
-
Fox, R.M.1
Lee, S.-G.2
Zweidinger, D.T.3
-
12
-
-
0032122783
-
Impact of self-heating and thermal coupling on analog circuits in SOI CMOS
-
July
-
B. M. Tenbroek, M. S. L. Lee, W. Redman-White, R. J. T. Bunyam, and M. J. Uren, "Impact of self-heating and thermal coupling on analog circuits in SOI CMOS", IEEE J. of Solid-state Circuits, vol. 33, pp. 1037-1046, July 1998.
-
(1998)
IEEE J. of Solid-state Circuits
, vol.33
, pp. 1037-1046
-
-
Tenbroek, B.M.1
Lee, M.S.L.2
Redman-White, W.3
Bunyam, R.J.T.4
Uren, M.J.5
-
13
-
-
0032650608
-
On thermal effects in deep sub-micron VLSI interconnects
-
K. Banerjee, A. Mehrotra, A. Sangiovanni-Vincentelli, and C. Hu, "On thermal effects in deep sub-micron VLSI interconnects", in Proc. Design Automation Conference, 1999, pp. 885-891.
-
(1999)
Proc. Design Automation Conference
, pp. 885-891
-
-
Banerjee, K.1
Mehrotra, A.2
Sangiovanni-Vincentelli, A.3
Hu, C.4
-
14
-
-
0017269965
-
Computer simulation of integrated circuits in the presence of electrothermal interactions
-
Dec.
-
K. Fukahori and P. R. Gray, "Computer simulation of integrated circuits in the presence of electrothermal interactions", IEEE J. Solid-State Circuits, vol. 11, pp. 834-846, Dec. 1976.
-
(1976)
IEEE J. Solid-state Circuits
, vol.11
, pp. 834-846
-
-
Fukahori, K.1
Gray, P.R.2
-
15
-
-
0003346151
-
Broken symmetry and the formation of hot-electron domains in real-space transfer transistors
-
S. Luryi and M. Pinto, "Broken symmetry and the formation of hot-electron domains in real-space transfer transistors", Phys. Rev. Lett., vol. 67, pp. 2351-2354, 1991.
-
(1991)
Phys. Rev. Lett.
, vol.67
, pp. 2351-2354
-
-
Luryi, S.1
Pinto, M.2
-
16
-
-
0026839003
-
Symmetry of the real-space transfer and collector-controlled states in charge injection transistors
-
S. Luryi and M. Pinto, "Symmetry of the real-space transfer and collector-controlled states in charge injection transistors", Semicond. Sci. Tech., vol. 7, pp. B520-B526, 1992.
-
(1992)
Semicond. Sci. Tech.
, vol.7
-
-
Luryi, S.1
Pinto, M.2
-
17
-
-
84918195592
-
The equivalent circuit model in solid-state electronics-part I: The single energy level defect centers
-
May
-
C. T. Sah, "The equivalent circuit model in solid-state electronics-Part I: The single energy level defect centers", Proc. IEEE, vol. 55, pp. 654-671, May 1967.
-
(1967)
Proc. IEEE
, vol.55
, pp. 654-671
-
-
Sah, C.T.1
-
18
-
-
0026888767
-
A nonlinear integral model of electron devices for HB circuit analysis
-
July
-
F. Filicori, G. Vannini, and V. A. Monaco, "A nonlinear integral model of electron devices for HB circuit analysis", IEEE Trans. Microwave Theory and Techniques, vol. 40, pp. 1456-1465, July 1992.
-
(1992)
IEEE Trans. Microwave Theory and Techniques
, vol.40
, pp. 1456-1465
-
-
Filicori, F.1
Vannini, G.2
Monaco, V.A.3
-
19
-
-
0016650246
-
MOTIS - An MOS timing simulator
-
Dec.
-
B. R. Chawla, H. K. Gummel, and P. Kozak, "MOTIS - an MOS timing simulator", IEEE Trans. Circuits and Systems, vol. 22, pp. 901-910, Dec. 1975.
-
(1975)
IEEE Trans. Circuits and Systems
, vol.22
, pp. 901-910
-
-
Chawla, B.R.1
Gummel, H.K.2
Kozak, P.3
-
20
-
-
0022795975
-
Table lookup MOSFET capacitance model for short-channel devices
-
Oct.
-
T. Shima, "Table lookup MOSFET capacitance model for short-channel devices", IEEE Trans. Computer-Aided Design of Integrated Circuits, vol. 5, pp. 624-632, Oct. 1986.
-
(1986)
IEEE Trans. Computer-aided Design of Integrated Circuits
, vol.5
, pp. 624-632
-
-
Shima, T.1
-
22
-
-
0033318971
-
Measurement-based mathematical active device modeling for high-frequency circuit simulation
-
June
-
D. E. Root, "Measurement-based mathematical active device modeling for high-frequency circuit simulation", IEICE Trans. Electronics, vol. E82-C, pp. 924-936, June 1999.
-
(1999)
IEICE Trans. Electronics
, vol.E82-C
, pp. 924-936
-
-
Root, D.E.1
|