Global planarization characteristics of shallow trench isolation-chemical mechanical polishing process with and without reverse moat etch step

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Seo, Yong Jin ^a   Park, Sung Woo ^a   Kim, Chul Bok ^a   Kim, Sang Yong ^b   Lee, Woo Sun ^c   Park, Jin Seong ^c  

^a Daebul University   (South Korea)

^b ANAM Semiconductor Co Inc   (South Korea)

^c Chosun University   (South Korea)

Author keywords

Chemical mechanical polishing (CMP); End point detection (EPD); High selectivity slurry (HSS); Reverse moat step (RMS); Shallow trench isolation (STI)

Indexed keywords

EID: 0037306744     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (8)

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