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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2083-2086

Submicron ferroelectric capacitors fabricated by chemical mechanical polishing process for high-density ferroelectric memories

(5) Igarashi, Yasushi a Tani, Kouichi a Kasai, Masanori a Ashikaga, Kinya a Ito, Toshio a

a OKI ELECTRIC INDUSTRY CO (Japan)

Author keywords

Chemical mechanical polishing; Damascene process; Ferroelectric; Process damage; Redistribution of Bi; SBT; Submicron ferroelectric capacitor

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL POLISHING; CRYSTAL STRUCTURE; ELECTRIC FIELDS; ELECTRIC VARIABLES MEASUREMENT; ELECTRODES; ELECTROMAGNETIC WAVE POLARIZATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICAL MECHANICAL POLISHING; FERROELECTRIC CAPACITORS; HIGH DENSITY FERROELECTRIC MEMORIES; PYROCHLORE;

FERROELECTRIC DEVICES;

EID: 0033723906 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2083 Document Type: Article

Times cited : (19)

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