The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1143-1146

  Dekkers, H F W ^a   Duerinckx, F ^a   De Wolf, S ^a   Agostinelli, G ^a   Szlufcik, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRAPPING DENSITY; DIFFUSION MECHANISM; GAS FLOW RATIO; SURFACE PASSIVATION;

DIFFUSION; HYDROGEN; OPTIMIZATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATES; SURFACE PROPERTIES;

SILICON NITRIDE;

EID: 6344265429     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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