A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 302-305

  He, Jin ^a   Xi, Xuemei ^a   Chan, Mansun ^a   Cao, Kanyu ^a   Niknejad, Ali ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Compact modeling; MOSFETs; Surface potential; The capacitance

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA ACQUISITION; ELECTRIC POTENTIAL; ELECTROSTATICS; GATES (TRANSISTOR); MATHEMATICAL MODELS; OPTIMIZATION; PARAMETER ESTIMATION; VARACTORS;

COMPACT MODELING; DEPLETION REGION; SUBSTRATE DOPING; SURFACE POTENTIALS;

MOSFET DEVICES;

EID: 6344252734     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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