SCOPUS 정보 검색 플랫폼

Volumn , Issue , 2001, Pages 96-99

General treatment of the effect of stress on defect diffusion in Si

Author keywords

Defects; Diffusion; Pressure effects

Indexed keywords

ANISOTROPIC DIFFUSION; CRYSTALLINITY; ISOTROPIC DIFFUSION; VACANCY DIFFUSION;

ANISOTROPY; DEFECTS; DOPING (ADDITIVES); PRESSURE EFFECTS; SILICON; STRESS ANALYSIS;

DIFFUSION;

EID: 6344243523 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

References (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.