High rate growth of microcrystalline silicon films assisted by high density plasma

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1710-1713

  Niikura, Chisato ^a   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION FREQUENCY; GAS INJECTORS; HIGH DENSITY PLASMA; MICROCRYSTALLINE SILICON FILMS;

CURRENT DENSITY; GLASS; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SOLAR CELLS; SUBSTRATES; THIN FILMS;

SILICON;

EID: 6344229919     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. L. Guo, M. Kondo, M. Fukawa, K. Saitoh and A. Matsuda, "High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition", Jpn. J. Appl. Phys. 37, L1116 (1998).
2. M. Fukawa, S. Suzuki, L. Guo, M. Kondo and A. Matsuda, "High rate growth of microcrystalline silicon using a high pressure depletion method with VHP plasma", Solar Energy Mater. & Solar Cells 66, 217 (2001).
3. S. Suzuki, M. Kondo and A. Matsuda, "Growth of device grade μc-Si films at over 50 A/s using PECVD", Sol. Energy Mat. & Sol. Cells 74, 489 (2002).
4. S. Veprek, "A thermodynamic criterion of the crystalline-to- amorphous transition in silicon", Phil. Mag. B 45, 137 (1982).
5. J. Robertson, "Deposition mechanism of hydrogenated amorphous silicon", J. Appl. Phys. 87, 2608 (2000).
6. G. Ganguly and A. Matsuda, "Defect formation during growth of hydrogenated amorphous silicon", Phys. Rev. B 47, 3661 (1993).