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Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7759-7763

ZnSe/GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements

(7) Souifi, A a Adhiri, R a Le Dantec, R a Guillot, G a Uusimaa, P b Rinta Moykky A b Pessa, M b

a UNIVERSITÉ DE LYON (France)

b TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACES (MATERIALS); PHOTOCURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

MIGRATION-ENHANCED EPITAXY (MEE); VALENCE BAND OFFSETS;

HETEROJUNCTIONS;

EID: 0032607925 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370581 Document Type: Article

Times cited : (8)

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