Structural properties of AlCrN, GaCrN and InCrN

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2046-2048

  Kimura, S ^a   Emura, S ^a   Tokuda, K ^a   Zhou, Y K ^a   Hasegawa, S ^a   Asahi, H ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Solubility; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

CHROMIUM; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LATTICE CONSTANTS; MAGNETIC DEVICES; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SOLUBILITY; TERNARY SYSTEMS; X RAY DIFFRACTION;

A1. SOLUBILITY; A1. X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; B2. MAGNETIC MATERIALS; B2. SEMICONDUCTING III-V MATERIALS;

ATOMS;

EID: 63349090880     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.008     Document Type: Article

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