MBE growth and patterned backgating of electron-hole bilayer structures

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1988-1993

  Farrer, I ^a   Croxall, A F ^a   Gupta, K Das ^a   Nicoll, C A ^a   Beere, H E ^a   Thangaraj, M ^a   Waldie, J ^a   Ritchie, D A ^a   Pepper, M ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Coulomb drag; A3. Molecular beam epitaxy; B3. Electron hole bilayer devices; B3. Patterned backgate

Indexed keywords

CRYSTAL GROWTH; DRAG; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTOR QUANTUM WIRES;

A1. COULOMB DRAG; A3. MOLECULAR BEAM EPITAXY; B3. ELECTRON-HOLE BILAYER DEVICES; B3. PATTERNED BACKGATE; CONVENTIONAL PHOTOLITHOGRAPHIES; LOW TEMPERATURES; MBE GROWTHS; TRANSPORT MEASUREMENTS; TWO-DIMENSIONAL;

ELECTRONS;

EID: 63349089531     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.187     Document Type: Article

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