Group-IV-diluted magnetic semiconductor FexSi1-x thin films grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2139-2142

  Su, W F ^a   Gong, L ^a   Wang, J L ^a   Chen, S ^a   Fan, Y L ^a   Jiang, Z M ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

A1. Doping; A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting materials

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; HALL EFFECT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC MATERIALS; MAGNETIC SEMICONDUCTORS; MAGNETISM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES; SURFACE SEGREGATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ANOMALOUS HALL EFFECTS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; FERROMAGNETIC ORDERINGS; GROWTH DIRECTIONS; MEASUREMENTS OF; SEMICONDUCTING MATERIALS; SIGNIFICANT SURFACES; UNIFORM DISTRIBUTION;

EPITAXIAL GROWTH;

EID: 63349083183     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.014     Document Type: Article

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