Study of the poly/epi kinetic ratio in SiH4 based chemistry for new CMOS architectures

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 21-24

  Talbot, Alexandre ^a   Arcamone, Julien ^b   Fellous, Cyril ^a   Deleglise, Florence ^a   Dutartre, Didier ^a  

^a STMICROELECTRONICS   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Epitaxy; Growth rate; Non selective; Polysilicon; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELLIPSOMETRY; EPITAXIAL GROWTH; GROWTH KINETICS; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TEMPERATURE CONTROL; TEXTURES; THERMAL EFFECTS;

GROWTH RATE; NON-SELECTIVE GROWTH; POLYCRYSTAL ROUGHNESS; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

POLYSILICON;

EID: 13244278286     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.135     Document Type: Conference Paper

References (3)

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3. Harrison, et al. IEDM technical digest proceedings, 2001.