Low pressure silicon selective epitaxial growth and its thermodynamic considerations

Journal De Physique. IV : JP

Volumn 3, Issue 3, 1993, Pages 51-58

  YE, L ^a   Armstrong, B M ^a   Gambile, H S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; SILICON; THERMODYNAMICS; VLSI CIRCUITS;

GAS FLOW; PROCESS PRESSURE; THERMAL PROCESSING REACTOR;

EPITAXIAL GROWTH;

EID: 0027649744     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)