Sub-bandgap photoluminescence from as-grown and annealed layers of CdTe

Superlattices and Microstructures

Volumn 45, Issue 4-5, 2009, Pages 228-233

  Sochinskii, N V ^a   Abellán Rubio, María de los Angeles ^a   Rodriguez Fernandez J ^a   Dieguez E ^b   Franc, J ^c   Hlidek, P ^c   Praus, P ^c   Babentsov, V ^d  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c CHARLES UNIVERSITY   (Czech Republic)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Annealing; CdTe; Photoluminescence; Thin layers

Indexed keywords

ANNEALING; DEFECTS; ENERGY GAP; II-VI SEMICONDUCTORS; PHOTOLUMINESCENCE; SAPPHIRE; SILICON COMPOUNDS;

BAND-TO-BAND RECOMBINATION; CDTE; DEEP-LEVEL DEFECTS; EXCITATION POWER DEPENDENCE; QUALITY IMPROVEMENT; RECOMBINATION PROCESS; THIN LAYERS; VARIOUS SUBSTRATES;

CADMIUM TELLURIDE;

EID: 63149098384     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2008.12.025     Document Type: Article

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