Implantable real-time dosimetric probe using GaN as scintillation material

Sensors and Actuators, A: Physical

Volumn 151, Issue 1, 2009, Pages 29-34

  Pittet, Patrick ^a,b,c   Lu, Guo Neng ^a,b,c   Galvan, Jean Marc ^a   Loisy, Jean Yves ^a,b,c   Ismail, Anas ^d   Giraud, Jean Yves ^d   Balosso, Jacques ^d,e  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

^c UNIVERSITÉ DE LYON   (France)

^d GRENOBLE UNIVERSITY HOSPITAL   (France)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Chemical and tip cleavage process; GaN scintillator; Implantable dosimetric probe; Real time measurements

Indexed keywords

CLADDING (COATING); DOSIMETERS; DOSIMETRY; ELECTRON BEAMS; FIBERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LUMINESCENCE; MULTIPHOTON PROCESSES; OPTICAL FIBERS; PHOTONS; PROBES; SCINTILLATION; SCINTILLATION COUNTERS; TIME MEASUREMENT;

ACCURATE MEASUREMENTS; CLADDING FIBERS; DOSE - RESPONSE CURVES; FIELD SIZES; GAN SCINTILLATOR; IMPLANTABLE DOSIMETRIC PROBE; LIGHT OUTPUTS; NARROW BANDS; NEAR BAND EDGES; OUTPUT SIGNALS; PHOTO DETECTIONS; RADIATION PULSE; RADIO LUMINESCENCES; REAL-TIME MEASUREMENTS; REPRODUCIBILITY; SCINTILLATION MATERIALS; UV EMISSIONS; YELLOW LUMINESCENCES;

SEMICONDUCTING GALLIUM;

EID: 63049115688     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2009.02.018     Document Type: Article

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